JPH0142508B2 - - Google Patents

Info

Publication number
JPH0142508B2
JPH0142508B2 JP57097723A JP9772382A JPH0142508B2 JP H0142508 B2 JPH0142508 B2 JP H0142508B2 JP 57097723 A JP57097723 A JP 57097723A JP 9772382 A JP9772382 A JP 9772382A JP H0142508 B2 JPH0142508 B2 JP H0142508B2
Authority
JP
Japan
Prior art keywords
optical transmission
metal tube
envelope
metal
transmission path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57097723A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58215071A (ja
Inventor
Mutsuhiro Mori
Nobutake Konishi
Takeshi Yokota
Tomoyuki Tanaka
Tsunego Odai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57097723A priority Critical patent/JPS58215071A/ja
Publication of JPS58215071A publication Critical patent/JPS58215071A/ja
Publication of JPH0142508B2 publication Critical patent/JPH0142508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263Photothyristors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4248Feed-through connections for the hermetical passage of fibres through a package wall
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/44Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
    • G02B6/4401Optical cables
    • G02B6/4415Cables for special applications
    • G02B6/4427Pressure resistant cables, e.g. undersea cables
    • G02B6/4428Penetrator systems in pressure-resistant devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Thyristors (AREA)
JP57097723A 1982-06-09 1982-06-09 光駆動半導体装置 Granted JPS58215071A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57097723A JPS58215071A (ja) 1982-06-09 1982-06-09 光駆動半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57097723A JPS58215071A (ja) 1982-06-09 1982-06-09 光駆動半導体装置

Publications (2)

Publication Number Publication Date
JPS58215071A JPS58215071A (ja) 1983-12-14
JPH0142508B2 true JPH0142508B2 (en]) 1989-09-13

Family

ID=14199805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57097723A Granted JPS58215071A (ja) 1982-06-09 1982-06-09 光駆動半導体装置

Country Status (1)

Country Link
JP (1) JPS58215071A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0619139U (ja) * 1992-07-29 1994-03-11 ミツミ電機株式会社 テープガイド及びヘッドアセンブリ

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094770A (ja) * 1983-10-28 1985-05-27 Mitsubishi Electric Corp 光トリガサイリスタの製造方法
JPS60157256A (ja) * 1984-01-25 1985-08-17 Mitsubishi Electric Corp 光トリガサイリスタ
US5970194A (en) * 1998-02-19 1999-10-19 Uniphase Telecommunications Products, Inc. Optical fiber having hermetically sealable section

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5949708B2 (ja) * 1979-06-13 1984-12-04 三菱電機株式会社 光半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0619139U (ja) * 1992-07-29 1994-03-11 ミツミ電機株式会社 テープガイド及びヘッドアセンブリ

Also Published As

Publication number Publication date
JPS58215071A (ja) 1983-12-14

Similar Documents

Publication Publication Date Title
JPH0480543B2 (en])
US4368481A (en) Light-driven semiconductor device
JPH0142508B2 (en])
JP4550976B2 (ja) 光電陰極および電子管
US5801429A (en) Semiconductor device
US5596210A (en) Light trigger type semiconductor device with reflection prevention film
JPS583281A (ja) 光駆動形半導体装置
JPH0440288Y2 (en])
JPS5949708B2 (ja) 光半導体装置
JPS6223288B2 (en])
JPH1074576A (ja) イオン発生装置用放電電極
JPS60241263A (ja) 光駆動形半導体装置
JPS5934662A (ja) 光直接点弧サイリスタ
JPH03219675A (ja) 光駆動半導体装置
JP7502966B2 (ja) エネルギー線管
JPS6148787B2 (en])
JPH04124878A (ja) 光駆動半導体装置
JPS61116305A (ja) 平形光駆動半導体装置
JPS61112387A (ja) 冷却型光電変換装置
JPS6250712A (ja) 光駆動型半導体装置
JPH07118532B2 (ja) 光駆動型半導体装置
JPS58157160A (ja) 光駆動型半導体装置
JPH0515719Y2 (en])
JPS62176137A (ja) 加圧圧接型半導体装置
JPS6359059B2 (en])